i characteristic中文是什么意思

• 安特性

• "i"中文翻译    pron. (pl. we ) 〔人称代词，第一人称，单 ...
• "characteristic"中文翻译    adj. 有特性的；表示…特性的，…特有的。 Japan ...
• "e-i characteristic" 中文翻译 :    伏-安特性曲线
• "v i characteristic" 中文翻译 :    伏 安特性
• "be characteristic of" 中文翻译 :    表现了…的特点; 具有...的特性, 为...所特有; 具有...特色的; 具有……的特色; 为…所特有，是…的特征
• "characteristic" 中文翻译 :    adj. 有特性的；表示…特性的，…特有的。 Japan's characteristic art 日本特有的艺术。 n. 特性，特征，性能，特色。 be characteristic of …所独有的特征，有…的特色。 characteristic of logarithm 对数的首数。 adv. -cally
• "characteristic of" 中文翻译 :    表示特性的; 不关心的; 独有的,特有的; 对…淡漠; 特有的，表示...特性的; 特征是
• "a distinct characteristic" 中文翻译 :    显明的特点
• "a orption characteristic" 中文翻译 :    吸收特性
• "aberration characteristic" 中文翻译 :    象差特性
• "absorption characteristic" 中文翻译 :    吸声特性; 吸收特性曲线; 吸收匦郧
• "ac characteristic" 中文翻译 :    交流特性
• "acceleration characteristic" 中文翻译 :    加速运动特性, 加速性能
• "accidental characteristic" 中文翻译 :    非本质性特征
• "acoustic characteristic" 中文翻译 :    声学特性; 音响特性
• "acoustiocal characteristic" 中文翻译 :    声学特性
• "acquired characteristic" 中文翻译 :    获得特性的; 习得特性
• "adjustable characteristic" 中文翻译 :    调整特性
• "adolescent characteristic" 中文翻译 :    青少年特征
• "aerodynamic characteristic" 中文翻译 :    空气动力特性; 气动力特性
• "aeroplane characteristic" 中文翻译 :    飞机特性
• "aes characteristic" 中文翻译 :    声频工程学会规定特性
• "age characteristic" 中文翻译 :    年龄特征
• "ageing characteristic" 中文翻译 :    老化特性; 时效特性
• "aging characteristic" 中文翻译 :    时效特性, (耐)老化性能

• ( 4 ) the p - i characteristic of fexcu ( 1 - x ) granule film is studied
  研究表明这是fm nwfm结构特有的可恢复击穿特性。
• Then the p - i characteristic of fexcu ( 1 - x ) granular film can be explained qualitatively
  利用zimsll理论对hxcu （ l x ）颗粒膜的异常p i特性做了比较符合的定性的解释。
• Static power convertors ; semiconductor rectifier equipment with i characteristic for charging of batteries ; requirements
  静态电源转换器.蓄电池充电用具有i特性曲线的半导体
• By numerical work , the time evolvement curves of the corrected solution , phase orbits and v - i characteristics demonstrated the deterministic chaos
  通过数值方法给出解的时间演化曲线、相轨道和伏安特性曲线，它们描述了系统中存在的确定性混沌。
• For ac electric arc furnace is an unbalanced , nonlinear and time variant load that produces unbalance , harmonics and interharmonics related with flicker effect . the modeling of all these aspects requires adopting a nonlinear , asymmetrical and dynamic v - i characteristic for the electric arc
  由于交流电弧炉是一种不平衡的、非线性时变负载，它产生与电压闪变有关的不平衡、谐波和分数谐波，所有这些就需要一种非线性、不对称的动态u ? i特性的电弧炉模型。
• Zno varistors have been widely used in electronic and electrical power devices and systems because of excellent nonlinear v - i characteristics and high absorbance of electric current surges . with the smt ( surface mounted technology ) development , traditional zno varistors can not meet the multilayer thin films lamination structure nappe varistor ceramics and metal electrode low temperature co - fire need . however , the best character of zno - v2o5 varistor can sinter in common furnace during lower temperature ( 900 ) , not only settling the problem relate to upon , but also saving energy sources
  Zno压敏电阻因其优异的v ? i非线性和较高的浪涌吸收能力而广泛应用在电子、电力设备系统上。然而,随着表面贴装技术( smt )的发展,传统的zno压敏陶瓷不能满足多层膜独石结构叠层压敏电阻元件陶瓷与金属电极低温共烧的需要。而zno ? v2o5系压敏陶瓷的最大优点是能用普通烧结炉在较低温度( 900 )下烧结,不仅解决了以上问题,还大大节约了能源。
• So the conductive behavior in ac field was equivalent with the parallel connection of a resistor and a capacitor , the nonlinearity of v - i characteristics originate from a combination of the implication of the nonlinear contribution of tunnel conduction between graphite particles and the production of additional conducting pathways under sufficiently strong local fields , which is the function of the gap between graphite particles and has a relation with the transition ability of electrons
  导电沥青混凝土的导电行为则可用隧道效应进行分析，交变电场中的导电行为可等效为电阻r和电容c并联，非线性v - i特性产生于隧道效应时粒子间的非线性导电和高电场时诱发额外的导电通路，二者是粒子间隙的函数，与电子跃迁能力有关。
• This subject is a research about manufacturing silicon magnetic - transistor with rectangle - plank cubic construction on silicon surface by mems technology , meanwhile it also makes a experiment - research on characteristic of silicon magnetic - transistor manufactured experiment expresses that silicon magnetic - transistor with rectangle plank cubic construction which is made by mems technology owns many virtues , which are as follows : first , stronger v - i characteristic curves and higher magnetic sensitivity ( collector current magnetic sensitivity of sample can achieve to 227 % / t ) , second , lower negative - temperature coefficient that is small
  本课题主要研究采用mems技术在硅片上制作矩形板状立体结构硅磁敏三极管，并对制作的硅磁敏三极管样品基本特性进行实验研究。实验结果表明本课题采用mems技术设计、制作的矩形板状立体结构的硅磁敏三极管样品具有较理想的伏安特性曲线、具有较高的磁灵敏度(样品集电极电流磁灵敏度可达227 / t ) 、具有负温度系数且温度系数较小、在磁场一定时i _ c i _ b线性关系较好等优点。
• In this paper , after studying the technology of virtual instrument and the characteristics of ld , we developed the ld test system using the design idea of virtual instrument 。 the system is mainly used for test the threshold current , differential efficiency , v - i characteristic and p - i characteristic of ld module
  本课题在对虚拟仪器技术和半导体激光器各项性能参数深入研究的基础上,采用虚拟仪器的设计思想,研究开发了基于虚拟仪器技术的半导体激光器特性参数检测系统。该系统主要面向组装后的激光二极管组件,对其进行电流阈值( ith ) 、光电特性( p - i ) 、电抗特性( v - i )等主要特性的测试。
• First , the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor , and simulate characteristic of single electon transistor with matlab tool . secondly , the paper combine spice simulation program with master equation of single electron transistor , put forward novel spice simulation method of single electron transistor based on master equation , by choose master state of single electron transistor and build master equation of single electron transistor , afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program , it ’ s result prove the method is availability precision comparing with master equation method
  然后在此基础上提出了基于主方程法单电子晶体管spice模拟新方法,本论文结合当前电路模拟软件spice程序和单电子晶体管主方程模拟算法,通过选择单电子岛电子数的主要状态,建立单电子晶体管主方程,然后求解主方程,求得单电子晶体管spice等效模型的受控源的非线性函数,然后利用集成电路辅助分析软件spice的abm (模拟行为建模)建立单电子晶体管( set ) spice等效模型,利用set的等效模型对单电子晶体管v - i特性进行仿真,实验证明此方法与直接解主方程法相比具有一定的精度。